feb.1999 v dss ................................................................................ 250v r ds (on) (max) .............................................................. 0.13 w i d .......................................................................................... 30a 250 30 30 90 250 C55 ~ +150 C55 ~ +150 4.8 v v a a w c c g v dss v gss i d i dm p d t ch t stg 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain FS30SM-5 outline drawing dimensions in mm v gs = 0v v ds = 0v typical value symbol drain-source voltage gate-source voltage drain current drain current (pulsed) maximum power dissipation channel temperature storage temperature weight to-3p mitsubishi nch power mosfet FS30SM-5 high-speed switching use application smps, dc-dc converter, battery charger, power supply of printer, copier, hdd, fdd, tv, vcr, per- sonal computer etc. maximum ratings (tc = 25 c) parameter conditions ratings unit
feb.1999 250 200 150 100 50 0 200 150 100 50 0 10 0 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 23 5710 1 23 5710 2 23 5710 3 3 2 2 t c = 25? single pulse tw=10? 100? 1ms 10ms dc 20 16 12 8 4 0 0 4 8 12 16 20 p d = 250w t c = 25? pulse test v gs =20v 10v 6v 5v 4.5v 50 40 30 20 10 0 0 1020304050 t c = 25? pulse test v gs = 20v 10v 6v 7v 5v 4v p d = 250w power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) mitsubishi nch power mosfet FS30SM-5 high-speed switching use i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 250v, v gs = 0v i d = 1ma, v ds = 10v i d = 15a, v gs = 10v i d = 15a, v gs = 10v i d = 15a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 15a, v gs = 10v, r gen = r gs = 50 w i s = 15a, v gs = 0v channel to case v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v m a ma v w v s pf pf pf ns ns ns ns v c/w 250 30 2 10.0 3 0.10 1.5 15.0 2100 420 90 35 85 240 100 1.5 10 1 4 0.13 1.95 2.0 0.50 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 40 32 24 16 8 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 10 2 7 5 3 2 10 0 10 0 23 5710 1 10 1 7 5 3 2 23 5710 2 t c = 25? v ds = 10v pulse test 125? 75? 23 5710 1 10 3 7 5 3 2 10 2 7 5 3 2 23 5710 2 10 0 10 1 tch = 25? v dd = 150v v gs = 10v r gen = r gs = 50 w t f t d(off) t r t d(on) 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 5 3 2 23 5710 1 23 5710 0 23 ciss tch = 25? f = 1mhz v gs = 0v coss crss 10 8 6 4 2 0 0 4 8 12 16 20 t c = 25? pulse test 30a 15a i d = 60a 45a 0 23 10 ? 5710 0 23 5710 1 23 5710 2 0.20 0.16 0.12 0.08 0.04 t c = 25? pulse test v gs = 10v 20v on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) mitsubishi nch power mosfet FS30SM-5 high-speed switching use
feb.1999 5.0 4.0 3.0 2.0 1.0 0 ?0 0 50 100 150 v ds = 10v i d = 1ma 1.4 1.2 1.0 0.8 0.6 0.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 10 0 7 5 3 2 10 ? ?0 10 1 7 5 3 2 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 50 40 30 20 10 0 0 0.8 1.6 2.4 3.2 4.0 25? v gs = 0v pulse test t c =125? 75? 20 16 12 8 4 0 0 20406080100 200v 100v v gs = 50v tch = 25? i d = 30a 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 10 ? p dm tw d= t tw t d=1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) mitsubishi nch power mosfet FS30SM-5 high-speed switching use
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